IRF510 Power MOSFET
Power MOSFET Channel Type: N
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and good cost-effectiveness.The TO-220AB package has power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
|Maximum Collector Emitter Voltage||No|
|Maximum Collector Current (DC)||No|
Write Your Own Review